Coherent light generators – Particular active media – Semiconductor
Patent
1987-12-14
1989-12-12
Lee, John D.
Coherent light generators
Particular active media
Semiconductor
357 4, 357 17, H01S 319
Patent
active
048872741
ABSTRACT:
A Semiconductor laser device comprising a quantum well region with a superlattice structure that functions as an active region, wherein the superlattice quantum well region is composed of alternate layers consisting of a plurality of first Al.sub.x Ga.sub.1-x As thin films and a plurality of second Al.sub.y Ga.sub.1-y As thin films (0<x<y.ltoreq.1).
REFERENCES:
patent: 4366569 (1982-12-01), Hirao et al.
patent: 4416012 (1983-11-01), Botez et al.
patent: 4480331 (1984-10-01), Thompson
patent: 4512022 (1985-04-01), Tsang
patent: 4573161 (1986-02-01), Sakai et al
patent: 4631802 (1986-12-01), Hayashi et al.
patent: 4635268 (1987-01-01), Motegi et al.
patent: 4745612 (1988-05-01), Hayakawa et al.
patent: 4750183 (1988-06-01), Takahashi et al.
patent: 4757510 (1988-06-01), Kaheno et al.
T. Hayakawa et al., J. Appl Phys (1981) 52:6068-73.
W. T. Tsang, Appl Phys Lett (1981) 39:786-88.
N. K. Dutta, J Appl Phys (1982) 53:7211-14.
H. Iwamura et al., Elect Lett (1983) 19:180-81.
Patent Abstracts of Japan (Nov. 29, 1985) 9(302), E-362, 2025, Appl. No. 58-250138.
Patent Abstracts of Japan (Jun. 28, 1984) 8(139), E-253, 1576, Appl. No. 57-160054.
Patent Abstracts of Japan (Nov. 22, 1984) 8(256), E-280, 1693, Appl. No. 59-127893.
Xerox Disclosure Journal, vol. 11, No. 4, Jul./Aug. 1986, D. L. Smith, "A Method for Fabrication an Index Guided Laser" pp. 151 & 152, Applied Physics Letters, vol. 49, No. 11, Sep. 15, 1986, T. Hayakawa et al., note page 152 paragraph 2.
"Low Current Threshold AlGaAs Visible Laser Diodes . . .", pp. 636 to 638, note FIG. 3.
Hayakawa Toshiro
Kondo Masafumi
Suyama Takahiro
Takahashi Kosei
Holloway B. R. R.
Lee John D.
Sharp Kabushiki Kaisha
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