Detergent for processes for producing semiconductor devices or p

Details Detergent for processes for producing semiconductor devices or p Detergent for processes for producing semiconductor devices or p

1999-07-02

2000-11-14

Gupta, Yogendra

Cleaning compositions for solid surfaces, auxiliary compositions

Cleaning compositions or processes of preparing

For cleaning a specific substrate or removing a specific...

510178, 510245, 510501, 510510, 510534, 134 12, 134 13, 134 40, C11D 306, C11D 718

Patent

active

061470422

DESCRIPTION:

BRIEF SUMMARY
TECHNICAL FIELD

The present invention relates to a cleaner for a semiconductor device production process or for a liquid crystal device production process, which is used for cleaning a metal or glass surface in the semiconductor device production process and the liquid crystal device production process.


TECHNICAL BACKGROUND

For washing wafers, etc., in the process of the production of semiconductor devices of silicon and compounds such as GaAs or in the process of the production of liquid crystal devices (LCD), and for removing dry-etching residual substance (residue) in the above processes, there are used strong acids (hydrochloric acid, sulfuric acid, nitric acid and fluoric acid), strong alkalis (sodium hydroxide, ammonia, hydrazine and hydroxylamine), ammonium fluoride, alkanolamines, organic solvents, and the like.
The above substances are all deleterious substances or hazardous substances and involve many problems in respect of working and environmental safety.
More specifically, for the removal of impurity ion, particles, an organic substance and an oxide layer on a metal (including a semimetal such as silicon) surface or a glass surface of a wafer, etc., in the above processes, there is required a complicated process (so-called RCA process) according to an object to be removed, in which a chemical such as a strong acid, a strong alkali or the like is used depending upon the object and cleaning is repeated. These chemicals involve problems in respect of both operability and safety.
For removing a dry etching residue, further, there is used hydroxylamine, tetramethylammonium hydroxide (TMAH), ammonium fluoride, alkanolamine, a mixture of an organic solvent with any one of these compounds, or an organic solvent itself, while these compounds have a problem in view of working safety or environmental pollution. Further, when the material of an object to be treated is a metal, the above compounds have another problem that they remain in the metal to corrode the metal.


DISCLOSURE OF THE INVENTION

It is an object of the present invention to provide a cleaner for a semiconductor device production process or for a liquid crystal device production process, which has high environmental and working safety and which makes it possible to clean a metal (including semimetal) or glass surface of an etching residue, impurities, etc., effectively without causing the problem of metal corrosion in a semiconductor device production process or a liquid crystal device production process.
The above object is achieved by any one of the following cleaners.
(1) A cleaner for a semiconductor device production process or for a liquid crystal device production process, which contains a polyphosphoric-acid-urea condensate or phosphoric-acid-urea polymer which is a reaction product from orthophosphoric acid and urea, and water, and which is for use for cleaning a metal and/or glass surface in at least one process of a semiconductor device production process and a liquid crystal device production process.
(2) The cleaner for a semiconductor device production process or for a liquid crystal device production process, according to the above (1), which contains, as an active ingredient, the polyphosphoric acid-urea condensate or phosphoric acid-urea polymer obtained by reacting an orthophsphoric acid with urea in an orthophosphoric acid:urea molar ratio of 1:1 to 1:5.
(3) The cleaner for a semiconductor device production process or for a liquid crystal device production process, according to the above (1) or (2), which contains 0.01 to 60% by weight of the polyphosphoric acid-urea condensate or phosphoric acid-urea polymer which is a reaction product from orthophosphoric acid and urea.
(4) The cleaner for a semiconductor device production process or for a liquid crystal device production process, according to any one of the above (1) to (3), which further contains hydrogen peroxide.
(5) The cleaner for a semiconductor device production process or for a liquid crystal device production process, according to any one of the above (1

REFERENCES:
patent: 3990977 (1976-11-01), Pearson
patent: 4331437 (1982-05-01), Remley

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