Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-05-15
2007-05-15
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S184000, C257S440000, C250S370140
Reexamination Certificate
active
10948839
ABSTRACT:
A semiconductor detector has a tunable spectral response. These detectors may be used with processing techniques that permit the creation of “synthetic” sensors that have spectral responses that are beyond the spectral responses attainable by the underlying detectors. For example, the processing techniques may permit continuous and independent tuning of both the center wavelength and the spectral resolution of the synthesized spectral response. Other processing techniques can also generate responses that are matched to specific target signatures.
REFERENCES:
patent: 5291034 (1994-03-01), Allam et al.
patent: 6657195 (2003-12-01), Martin et al.
Raghavan et al, Applied Physics Letters, vol. 81 No. 8 Aug. 19, 2002 “High-responsivity . . . detector” pp. 1369-1371.
Notification of Transmittal of the International Search Report and the Written Opinion, PCT/US04/31381, Nov. 30, 2005, 7 pages.
Raghavan, S. et al., High-Responsivity, Normal-Incidence Long-Wave Infrared (λ-7.2μm) InAs/In0.15Ga0.85As Dots-In-A-Well Detector, Applied Physics Letters, Aug. 19, 2002, pp. 1369-1371, vol. 81, No. 8.
Hayat Majeed M
Krishna Sanjay
Raghavan Sunil
Sakoglu Unal
Tyo J. Scott
Jackson Jerome
MH2 Technology Law Group
Stc@unm
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