Detector having a radiation sensitive surface

Details Detector having a radiation sensitive surface Detector having a radiation sensitive surface

1987-07-07

1991-03-26

James, Andrew J.

357 4, 357 16, 357 24, 357 58, 357 61, H01L 2714, H01L 2712, H01L 29161

Patent

active

050033646

ABSTRACT:
The invention relates to CCD Si detector configuration with a semiconductor sensibilizator. The spectral range of the detectors extends from 0.4 .mu.m to 1.6 .mu.m. The CCD Si detector configuration is produced as integrated structure so that a large picture element number can be achieved. The semiconductor layer sequence of the semiconductor sensibilizator is grown using differential molecular beam epitaxial growth techniques.

REFERENCES:
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patent: 4198646 (1980-04-01), Alexander et al.
patent: 4257057 (1981-03-01), Cheung et al.
patent: 4276099 (1981-06-01), Keen et al.
patent: 4313127 (1982-01-01), Su et al.
patent: 4553152 (1985-11-01), Nishitani
patent: 4661168 (1987-04-01), Maier et al.
Luryi et al., "New Infrared Detector on a Silicon Chip", IEEE Transactions on Electron Devices, vol. ED-31, No. 9, Sep. 1984.

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