Detection of electron-beam scanning of a substrate

Details Detection of electron-beam scanning of a substrate Detection of electron-beam scanning of a substrate

1992-10-13

1995-02-21

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257917, 365118, G11C 1300

Patent

active

053919092

ABSTRACT:
The scanning of an operating integrated circuit (IC) substrate by an electron (e)-beam is detected by providing conductive plates in the substrate, and triggering a charge-sensitive mechanism such as a field effect transistor (FET) when an e-beam has scanned over the plate. The plates can be fabricated at different levels within the substrate, with a lower plate preferably shaded from the e-beam by an upper plate and providing a reference for the upper plate. E-beam detection occurs either through the positive or negative charging of capacitances associated with the FETs, or from instantaneous negative or positive current flows from the detector plates; a latch is actuated to hold an instantaneously detected current level exceeding a predetermined threshold. The logic state of this latch can be used to modify the functional operation of the IC in real time.

REFERENCES:
patent: 3428850 (1969-02-01), Crowell et al.
patent: 3721962 (1973-03-01), Foster et al.
patent: 3736571 (1973-05-01), Cohen et al.
patent: 4079358 (1978-03-01), Arntz
patent: 4247859 (1981-01-01), Rai-Choudhury et al.
patent: 4396996 (1983-08-01), Oldham
"Electron-Beam Customization, Repair, and Testing of the Wafer-Scale Circuits", Solid State Technology, Feb. 1984, pp. 135-139, Shaver.
"Use of E-Beam for Random Access Read and Write of Digital Test Signals", 1984 IEEE Int'l Solid-State Circuits Conf, pp. 22-23, 310, Jensen et al.

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