Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-07-17
2007-07-17
Andujar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S022000, C257S011000, C257S012000
Reexamination Certificate
active
11358933
ABSTRACT:
An apparatus and method for detecting electromagnetic radiation employs a deflectable micromechanical apparatus incorporating multiple quantum wells structures. When photons strike the quantum-well structure, physical stresses are created within the sensor, similar to a “bimetallic effect.” The stresses cause the sensor to bend. The extent of deflection of the sensor can be measured through any of a variety of conventional means to provide a measurement of the photons striking the sensor. A large number of such sensors can be arranged in a two-dimensional array to provide imaging capability.
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P.I. Oden et al., “Optical and Infrared Detection Using Microcantilevers”, SPIE, 1996, vol. 2744. (IDS Reference 7).
P.G. Datskos, et al., “Remote Infrared Radiation Detection Using Piezoresistive Microcantilevers,” Appl Phys Lett, 1996, pp. 2986-2988, vol. 69, No. 20.
P.G. Datskos, et al., “Photoinduced and Thermal Stress in Silicon Microcatilevers,” Appl Phys Lett, 1998, pp. 2319-2321, vol. 73, No. 16.
P.I. Oden, et al., “Optical and Infrared Detection Using Microcantilevers,” SPIE, 1996, vol. 2744.
Datskos Panagiotis G.
Datskou Irene
Rajic Slobodan
Andujar Leonardo
UT-Battelle LLC
Wilson Kirk A.
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