Detection of defects using transient contrast

Details Detection of defects using transient contrast Detection of defects using transient contrast

2007-10-31

2008-11-18

Nguyen, Ha (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C250S310000, C250S311000

Reexamination Certificate

active

07453274

ABSTRACT:
One embodiment relates to a method for detecting defects in circuitry formed on a semiconductor substrate. A first scan of said circuitry is performed by scanning a primary electron beam in a first scan direction relative to said circuitry, and secondary electrons emitted during the first scan are detected so as to form a first voltage-contrast image. A second scan of said circuitry is performed by scanning the primary electron beam in a second scan direction relative to said circuitry, and secondary electrons emitted during the second scan are detected so as to form a second voltage-contrast image. The second scan direction is non-parallel to the first scan direction. The first and second voltage-contrast images are then compared to detect electrically-active defects. Other embodiments, aspects and features are also disclosed.

REFERENCES:
patent: 5132507 (1992-07-01), Nakano
patent: 6169603 (2001-01-01), Takayama
patent: 6204075 (2001-03-01), Kikuchi
patent: 7081625 (2006-07-01), Furiki et al.
patent: 7132301 (2006-11-01), Fan
patent: 7135676 (2006-11-01), Nakasuji et al.
patent: 7244923 (2007-07-01), Song et al.

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