Detection and correction of defects in semiconductor memories

Details Detection and correction of defects in semiconductor memories Detection and correction of defects in semiconductor memories

2006-11-17

2009-12-29

Tran, Michael T (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185240

Reexamination Certificate

active

07639535

ABSTRACT:
A non-volatile memory may have memory portions, such as blocks or other granularities of units of memory, which may fail in actual use. These defective portions can be replaced with other portions which may, in some cases, be of corresponding size. In some embodiments, defects may be detected using a current sensor which detects the current drawn in actual operation. If an excessive current is drawn, this may be detected, the defective unit deactivated, and a replacement provided in its stead. This may result in the repair of a defect with little inconvenience to the user in some embodiments.

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