Detection and classification of micro-defects in...

Details Detection and classification of micro-defects in... Detection and classification of micro-defects in...

2006-08-29

2006-08-29

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

Reexamination Certificate

active

07098052

ABSTRACT:
A method and apparatus for the detection and classification defects in a silicon or semi-conductor structure, in particular using room temperature photoluminescence effects, is described. The method involves directing a high intensity beam of light at a surface of a sample of silicon or semi-conductor structure to be tested producing a photoluminescence image, producing a reflected light image, combining the information in the two images to detect, map and identify and/or characterize micro-defects in the silicon or semi-conductor structure.

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patent: WO98 11425 (1998-03-01), None
“Non-Destructive, Non-Contacting Test of Si Wafers by Thermoreflectance,” IBM Technical Disclosure Bulletin, vol. 29, No. 9, pp. 4105-4113, Feb. 1, 1987.
Higgs et al., “Application of room temperature photoluminescence for the characterization of impurities and defects in silicon”, Proceedings of the SPIE, vol. 3895, pp. 21-37 (Sep. 13, 1999).
Ribes et al., “Refelected-light photoluminescence and OBIC imaging of solar cells using a confocal scanning laser MACROscope/microscope”, Solar Energy Materials and Solar Cells, Elsevier Science Publishers, vol. 44, No. 4, pp. 439-450 (Dec. 15, 1996).
Bothe et al., “Spatially-resolved photoluminescence measuerments on Cu(In, Ga)Se2 thin films”, Thin Solid Films, vol. 403-404, pp. 453-456 (Feb. 1, 2002).

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