Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-07-05
2005-07-05
Mai, Son (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185020, C365S185030, C365S185240
Reexamination Certificate
active
06914823
ABSTRACT:
In a non-volatile semiconductor memory system (or other type of memory system), a memory cell is programmed by changing the threshold voltage of that memory cell. Because of variations in the programming speeds of different memory cells in the system, the possibility exists that some memory cells will be over programmed. That is, in one example, the threshold voltage will be moved past the intended value or range of values. The present invention includes determining whether the memory cells are over programmed.
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Chen Jian
Li Yan
Lutze Jeffrey W.
Harmon & DeNiro LLP
Mai Son
Marcus Vierra Magen
Sandisk Corporation
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