Detecting over programmed memory

Details Detecting over programmed memory Detecting over programmed memory

2007-05-08

2007-05-08

Mai, Son L. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185020, C365S185030, C365S185300

Reexamination Certificate

active

11124709

ABSTRACT:
In a non-volatile semiconductor memory system (or other type of memory system), a memory cell is programmed by changing the threshold voltage of that memory cell. Because of variations in the programming speeds of different memory cells in the system, the possibility exists that some memory cells will be over programmed. That is, in one example, the threshold voltage will be moved past the intended value or range of values. The present invention includes determining whether the memory cells are over programmed.

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