Detecting defects in integrated circuits

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – For fault location

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324765, 324613, G01R 3126

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06043662&

ABSTRACT:
The breakdown of an ultra-thin dielectric layer is detected by applying a test signal to the layer. Measurements are taken of noise signals present in the layer during the application of the test signal. At breakdown, a significant increase occurs in the amplitude of the measured noise signals. Similarly, fluctuations in quiescent current, I.sub.DDQ, (I.sub.DDQ noise signals), rather than the values of I.sub.DDQ, are utilized during testing as the basis for detecting defects in integrated circuits.

REFERENCES:
patent: 5049811 (1991-09-01), Dreyer
patent: 5057441 (1991-10-01), Gutt
patent: 5252497 (1993-10-01), Idler
patent: 5598102 (1997-01-01), Smayling
patent: 5804975 (1998-09-01), Alers
J.M. Soden et al., "Identifying Defects in Deep-Submicron CMOS ICs", Sep. 1996, pp. 66-71, IEEE Spectrum.

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