Detecting breakdown in dielectric layers

Details Detecting breakdown in dielectric layers Detecting breakdown in dielectric layers

1996-09-18

1998-09-08

Karlsen, Ernest F.

Electricity: measuring and testing

Impedance, admittance or other quantities representative of...

Parameter related to the reproduction or fidelity of a...

324520, 324719, 438 14, 438 10, G01R 3126

Patent

active

058049754

ABSTRACT:
The breakdown of an ultra-thin dielectric layer is detected by applying a test signal to the layer. Measurements are taken of noise signals present in the layer during the application of the test signal. At breakdown, a significant increase occurs in the amplitude of the measured noise signals.

REFERENCES:
patent: 4891577 (1990-01-01), Ishikawa
patent: 5049811 (1991-09-01), Dreyer
patent: 5252497 (1993-10-01), Idler
patent: 5598102 (1997-01-01), Smayling
K.R. Farmer et al, Appl. Phys. Lett., vol. 52, No. 20, May 16, 1988, pp. 1749-1751, "Current Fluctuations . . . Tunnel Diodes".
Z.J. Ma et al, IEEE Electron Device Letters, vol. 15, No. 6, Jun. 1994, pp. 224-226, "Effects of Plasma . . . MOSFETs".
M. Aoki et al, IEEE Electron Device Letters, vol. 17, No. 3, Mar. 1996, pp. 118-120, "Hole-Induces 1/f Noise . . . Transistors".
Lee, S-H et al., "Quasi-breakdown of ultrathin gate oxide under high field stress", IEEE, Mar. 1994, pp. 25.4.1 to 25.4.4.

Affiliated with

Also associated with

Rating

Detecting breakdown in dielectric layers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Detecting breakdown in dielectric layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Detecting breakdown in dielectric layers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1284943