Detailed description of the presently preferred embodiments

Details Detailed description of the presently preferred embodiments Detailed description of the presently preferred embodiments

2006-10-10

2006-10-10

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

With shielding

C257S421000, C257S660000, C257S295000, C438S003000, C438S005000

Reexamination Certificate

active

07119419

ABSTRACT:
A memory device is proposed which enables to guarantee the operation of MRAM elements being magnetically shielded against a large external magnetic fields without being affected by an internal leakage magnetic field. The MRAM elements30which are shielded by magnetic shield layers33, 34are placed at an intermediate region41avoiding an edge region43and a center region42of the magnetic shield layers33, 34so that the MRAM element is secured to operate normally without being affected by the internal leakage magnetic field avoiding the edge region43where the magnetic shield effect is reduced by the exterior magnetic field, and avoiding the central region42where the internal leakage magnetic field is large.

REFERENCES:
patent: 6515352 (2003-02-01), Spielberger et al.
patent: 6724027 (2004-04-01), Bhattacharyya et al.
patent: 6808940 (2004-10-01), Sharma et al.
patent: 2002/0008988 (2002-01-01), Lenssen et al.
patent: 2004/0043516 (2004-03-01), Sharma et al.
patent: 2003-115578 (2003-04-01), None
patent: 2003-297983 (2003-10-01), None
patent: WO 03/034496 (2003-04-01), None

Affiliated with

Also associated with

Rating

Detailed description of the presently preferred embodiments does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Detailed description of the presently preferred embodiments, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Detailed description of the presently preferred embodiments will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3657514