Design structure for alpha particle sensor in SOI technology...

Details Design structure for alpha particle sensor in SOI technology... Design structure for alpha particle sensor in SOI technology...

2011-01-25

2011-01-25

Porta, David P (Department: 2884)

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

Reexamination Certificate

active

07875854

ABSTRACT:
The invention relates to a design structure, and more particularly, to a design structure for an alpha particle sensor in SOI technology and a circuit thereof. The structure is a silicon-on-insulator radiation detector which includes: a charge collection node; a precharge transistor that has a source from the charge collection node, a drain at Vdd, and a gate controlled by a precharge signal; an access transistor that has a source from the charge collection node, a drain connecting to a readout node, and a gate controlled by a read-out signal; and a detector pulldown transistor having a drain from the charge collection node, a source to ground, and a grounded gate.

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