Design of device layout for integration with power mosfet packag

Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame

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257401, H01L 23495

Patent

active

057675678

ABSTRACT:
The present invention discloses a MOSFET power IC device formed in a semiconductor chip including a source contact area which is provided for connecting to a lead-frame via a several of lead-wires. The power IC device includes many lead-wire contact points on the source contact area for securely attaching the lead wires onto the source contact area. These lead-wire contact points are uniformly distributed substantially over the source contact area thus the spread resistance is reduced whereby the device on-resistance and device performance may be improved.

REFERENCES:
patent: 5306937 (1994-04-01), Nishimura
patent: 5497013 (1996-03-01), Temple
patent: 5544038 (1996-08-01), Fisher et al.
patent: 5661315 (1997-08-01), Bauer et al.

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