Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1998-10-30
2000-03-14
Rosasco, S.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
G03F 900
Patent
active
060370823
ABSTRACT:
A mask (50) for use in lithographic printing includes a pattern (54) formed of a material which is substantially opaque with respect to a wavelength of radiation being used in the lithographic printing. The pattern (54) on the mask (50) corresponds to a desired feature to be formed on a substrate and includes a grating (58) having an alternating pattern of opaque and transparent regions (60, 62). The alternating pattern provides destructive interference of radiation at the substrate in a region corresponding to the desired feature due to diffraction, thereby improving resolution at the substrate. In addition, the alternating pattern (60, 62) on the mask (50) increases a number of focal planes at which the destructive interference occurs and thereby improves a focus process latitude by providing an acceptable resolution over variations in a distance between the mask (50) and the substrate.
REFERENCES:
patent: 5413884 (1995-05-01), Koch et al.
patent: 5415835 (1995-05-01), Brueck et al.
patent: 5601954 (1997-02-01), Krivokapic et al.
"Lithography II: Optical Aligners and Photomasks", Silicon Processing for the VLSI Era, pp. 459-489.
"Improving Resolution in Photolithography with a Phase-Shifting Mask", IEEE Transactions on Electron Devices, vol. ED-29, No. 12, Dec., 1982, pp. 1828-1836.
"Lithography Process Control: Tolerance Limits of Deep Ultraviolet Photolithography, Electron Beam Lithography, and Scanning Probe Lithography", by Kathryn Wilder, Bhanwar Singh and David F. Kyser, The 42nd International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication, Sponsored by: The American Vacuum Society in cooperation with: The Electron Devices Society of the Institute of Electrical and Electronic Engineers and The Optical Society of America, The Westin Hotel, Chicago, IL., May 26-29, 1998, 3 pages.
"Pattern-Dependent Correction of Mask Topography Effects for Alternating Phase-Shifting Masks", SPIE, vol. 2440, by Richard A. Ferguson, Alfred K. Wong, Timothy A. Brunner and Lars W. Liebmann, pp. 349-360.
Advanced Micro Devices , Inc.
Rosasco S.
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