Design and fabrication of rugged FRED

Details Design and fabrication of rugged FRED Design and fabrication of rugged FRED

2007-01-30

2007-01-30

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S092000, C438S167000

Reexamination Certificate

active

10757028

ABSTRACT:
An improved Fast Recovery Diode comprises a main PN junction defining a central conduction region for conducting high current in a forward direction and a peripheral field spreading region surrounding the central conduction region for blocking high voltage in the reverse direction. The main PN junction has an avalanche voltage equal to or lower than an avalanche voltage of the peripheral field spreading region so substantially the entire said main PN junction participates in avalanche conduction. This rugged FRED structure can also be formed in MOSFETS, IGBTS and the like.

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Fairchild Semiconductor Data Sheets ISL9R860P2, ISL9R860S3S, 8A, 600V Stealth Diode, 6 pages, Apr. 2002.
Fairchild Semiconductor Data Sheets ISL9R30120G2, 30A, 1200V Stealth Diode, 6 pages, May 2002.
Fairchild Semiconductor Data Sheets ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S, 15A, 600V Stealth Diode, 6 pages, Nov. 2002.

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