Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2005-04-19
2005-04-19
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S186000, C257S187000, C257S192000, C257S292000, C257S461000, C438S149000, C438S154000, C438S161000, C438S433000, C438S481000, C438S484000, C438S491000
Reexamination Certificate
active
06881986
ABSTRACT:
A novel structure for a photodiode is disclosed. It is comprised of a p-type region, which can be a p-substrate or p-well, extending to the surface of a semiconductor substrate. A multiplicity of parallel finger-like n-wells is formed in the p-type region. The fingers are connected to a conductive region at one end.
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Chiou Yu-Zung
Hsu Shou-Yi
Lieh Chen Ying
Lin Kuen-Hsien
Louie Wai-Sing
Taiwan Semiconductor Manufacturing Company
Thomas Kayden Horstemeyer & Risley
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