Depth measurement of high aspect ratio structures

Details Depth measurement of high aspect ratio structures Depth measurement of high aspect ratio structures

1993-05-17

1995-01-24

Housel, James C.

Optics: measuring and testing

By dispersed light spectroscopy

Utilizing a spectrometer

356357, G01B 1122

Patent

active

053846397

ABSTRACT:
An optical measurement system uses a laser beam to measure the depth of high aspect ratio structures disposed in a workpiece. The wavelength of the laser beam is selected so that the workpiece is transparent to the incident radiation and is greater than the lateral dimension of the structure to be measured. The angle of incidence of the laser beam at the workpiece surface or the wavelength of the laser beam is made to vary. The maxima backscatter signals from the top and from the bottom of the structure are detected along with the corresponding angle of incidence or wavelength at such maxima backscatter signals. The depth of the structure is commensurate with the detected angles of incidence or wavelengths at which the maxima backscatter signals are detected. Alternatively, with the angle of incidence and wavelength maintained constant, the maxima backscatter signals are detected as the depth of the structure increases, such as when a high aspect ratio structure is fabricated in a material, in order to measure the depth of the structure during fabrication. An exemplary application of the system is in the measurement of the depth of isolation trenches and trench capacitors in semiconductor materials, such as silicon, used in the fabrication of integrated circuits.

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