Deposition technique

Coating processes – Electrical product produced – Condenser or capacitor

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Details

427 85, 427 87, 4272481, 427255, 4272552, 4272555, 4272557, B05D 512, C23C 1600

Patent

active

045740933

ABSTRACT:
Deposited layers are advantageously obtained by utilizing a specific vapor deposition procedure. In this procedure, a substrate is positioned a relatively short distance from the source of a gas flow capable of producing the desired deposition. This gas flow is directed so that it contacts an interior region of the substrate and moves from the initial contact point to a point on the periphery of the substrate. Exemplary of such gas flow configurations is the positioning of a substrate at a small distance above a fused quartz frit through which the deposition gas flow is directed.

REFERENCES:
patent: 3663320 (1972-05-01), Maruyama et al.
patent: 3922467 (1975-11-01), Pinchon
patent: 4148939 (1979-04-01), Korjukin et al.
patent: 4273812 (1981-06-01), Tsutsui et al.
patent: 4315960 (1982-02-01), Ohji et al.

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