Deposition technique

Details Deposition technique Deposition technique

1985-09-03

1987-02-24

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

4272552, 156613, 156614, 156DIG70, 156DIG81, H01L 21205

Patent

active

046456899

ABSTRACT:
Devices such as photodiodes based on III-V semiconductor materials have been made utilizing a CVD epitaxial procedure. This procedure includes, for example, the use of a combination of liquid and solid chloride transport sources.

REFERENCES:
patent: 3888705 (1975-06-01), Fletcher et al.
patent: 4116733 (1978-09-01), Olsen et al.
Journal of Crystal Growth, vol. 46, No. 2, 1979, pp. 205-208.
Shaw, "Influence of Substrate Temperature on GaAs Deposition Rates", J. Electrochem. Soc.: Solid State Science, vol. 115, No. 4, pp. 405-408, Apr., 1968.
Chatterjee et al., "Vapor Phase Hetero-Epitaxy: Growth of GaInAs Layers", Journal of Crystal Growth, vol. 56, 1982, pp. 591-604.
Vohl, "Vapor-Phase Epitaxy of GaInAsP and InP", Journal of Crystal Growth, vol. 54, 1981, pp. 101-108.
Shaw, "Kinetics of Transport and Epitaxial Growth of GaAs with a Ga-AsCl.sub.3 System", Journal of Crystal Growth, vol. 8, 1971, pp. 117-128.

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