Deposition of tungsten

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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427250, 4272552, 437187, 437192, C23C 1608, C23C 1652, C23C 1656, C23C 1628

Patent

active

054076986

ABSTRACT:
A method is provided for low pressure chemical deposition of tungsten and tungsten metallization for defining interconnects for an integrated circuit. A surface layer of tungsten is provided which has a low film stress and a smooth surface characterized by a low diffuse reflectivity and high specular reflectivity, to facilitate photo-lithography. Tungsten is deposited by reduction of WF.sub.6 with H.sub.2 and SiH.sub.4 in nitrogen. Control of the gas flow rates, pressure, temperature and H.sub.2 /WF.sub.6 ratio in the reactive gas mixture provides for tailoring of the structure and characteristics of a deposited tungsten layer to provide high step coverage or a smooth surface for forming an overlying layer of tungsten which may be patterned photo-lithographically for defining interconnect. In order to provide metallization providing both good step coverage in via and contact holes and smooth surface for deposition of surface metallization, a two-stage tungsten deposition is provided.

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