Deposition of titanium amides

Details Deposition of titanium amides Deposition of titanium amides

2005-09-20

2005-09-20

Meeks, Timothy (Department: 1762)

Coating processes

Measuring, testing, or indicating

C427S255391, C427S255394

Reexamination Certificate

active

06946158

ABSTRACT:
The present invention is a process for enhancing the chemical vapor deposition of titanium nitride from a titanium containing precursor selected from the group consisting of tetrakis(dimethylamino)titanium, tetrakis(diethylamino)titanium and mixtures thereof, reacted with ammonia to produce the titanium nitride on a semiconductor substrate by the addition of organic amines, such as dipropylamine, in a range of approximately 10 parts per million by weight to 10% by weight, preferably 50 parts per million by weight to 1.0 percent by weight, most preferably 100 parts per million by weight to 5000 parts per million by weight to the titanium containing precursor wherein prior to the reaction, said titanium containing precursor is subjected to a purification process to remove hydrocarbon impurities from the titanium containing precursor. It is shown that addition of small amounts of organic amines enhance the deposition rate of titanium nitride, while the presence of hydrocarbons, such as n-decane, retard the deposition rate of titanium nitride.

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Pierson, “Handbook of Chemical Vapor Deposition,” Noyes Publications, (1992), pp. 87-88.

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