Deposition of synthetic diamonds

Details Deposition of synthetic diamonds Deposition of synthetic diamonds

1989-09-06

1991-06-11

Bueker, Richard

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 39, 156613, 156DIG68, 423446, 118723, 118 501, C23C 1648

Patent

active

050231090

ABSTRACT:
Synthetic diamond crystals and films are deposited on a pair of uniformly spaced apart facing plates made of silicon, molybdenum or boron in elemental, nitride or carbide form. The plates are suitably supported within a totally thermally insulated chamber where a pressure of about 10 torr or less is maintained in the form of an atmosphere which includes a carbon source and a major portion of hydrogen, and preferably includes oxygen in equal amount to the carbon. By supplying sufficient microwave power to create a plasma and a uniform temperature of about 950.degree. C. at the plate surfaces, diamond crystals economically grow on the surfaces of the facing plates. Preferably, either the plates or the backing sections thereof have a relatively high thermal conductivity so as to maintain a uniform temperature across the entire plate surface areas.

REFERENCES:
patent: 4434188 (1984-02-01), Kamo et al.
patent: 4707384 (1987-11-01), Schachner et al.
patent: 4728529 (1988-03-01), Etzkorn et al.
patent: 4767608 (1988-08-01), Matsumoto et al.
patent: 4816286 (1989-03-01), Hirose
patent: 4851254 (1989-07-01), Yamamoto et al.

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