Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1989-09-01
1991-07-16
Morgenstern, Norman
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505737, 505730, 427 34, 427 62, 427 22B, 427226, 427314, 427421, B05D 102, B05D 512
Patent
active
050325680
ABSTRACT:
A method is provided to apply a coating of a superconducting ceramic oxide to a substrate comprising introducing an atomized aqueous solution comprising at least three metal salts into inductively coupled plasma so as to deposit a superconductive ceramic oxide on the substrate, or alternatively, to deposit a mixed metal oxide on the substrate, which is converted into a superconductive ceramic oxide by post-annealing.
REFERENCES:
patent: 3340020 (1967-09-01), Neumachwander et al.
patent: 4361114 (1982-01-01), Gurev
Koukitu et al., "Preparation of Y--Ba--Cu--O Superconducting Thin Films by the Mist Microwave Plasma Decomposition Method", Jpn. J. Appl. Phys. vol. 28(7) L1212-1213, Jul. 1989.
Meng et al., "High Tc Superconducting Thin Films by Chemical Spray Deposition", Int. J. Mod. Phys. B vol. 1 (2) pp. 579-582 (1987).
Gurvitch et al., "Preparation and Substrate Reactions of Superconducting Y--Ba--Cu--O films", Appl. Phys. Lett. 51(13) Sep. 1987, pp. 1027-1029.
P. K. Bachman et al., MRS Bull., 13, 52 (1988).
J. G. Bendorz et al., Z. Phys. B, 64, 189 (1986).
B. A. Biegel et al., in High-T.sub.c Superconductivity: Thin Films and Devices, SPIE Pro. vol. 948; R. B. Van Dover et al., Eds, pp. 3-9.
I. F. M. Bosch et al., Silicates Industriels, 27, 587 (1962).
R. J. Cava et al., Nature, 332, 814 (1988).
C. W. Chu et al., Phys. Rev. Lett., 58, 405 (1987).
M. E. Chowher et al., J. Cryst. Growth, 46, 339 (1979).
J. J. Cuomo et al., Adv. Cer. Mat., 2, 422 (1987).
P. H. Dickinson et al., J. Appl. Phys., 66, 444 (1989).
P. K. Gallagher et al., MRS Bull., 22, 995 (1987).
P. M. Grant et al., Phys. Rev. Lett., 58, 2482 (1987).
C. R. Guarnieri et al., Appl. Phys. Lett., 53, 532 (1988).
P. Haldar et al., Science, 241, 1198 (1988).
R. M. Hazen et al., Phys. Rev. Lett., 60, 1657 (1988).
M. Hong et al., Appl. Phys. Lett., 51, 694 (1987).
Y. Ichikawa et al., J. Appl. Phys., 27, L381 (1988).
D. C. Johnston et al., Phys. Rev. B, 36, 4007 (1987).
M. Kagawa et al., J. Am. Ceram. Soc., 66, 751 (1983).
M. Kagawa et al., Science Reports of the Research Inst. of Tohoku Univ., 31, 216 (1983).
T. T. Kodas et al., Appl. Phys. Lett., 52, 1622 (1988).
T. T. Kodas et al., Appl. Phys. Lett., 54, 1923 (1989).
J. Kwo et al., Phys. Rev. B, 36, 4039 (1987).
O. K. Kwon et al., IEEE Electron Dev. Lett., 8, 582 (1987).
R. B. Laibowitz et al., Phys. Rev. B, 35, 8821 (1987).
R. B. Laibowitz, MRS Bull., 14, 58 (1989).
D. K. Lathrop et al., Appl. Phys. Lett., 51, 1554 (1987).
W. Y. Lee et al., Appl. Phys. Lett., 52, 2263 (1988).
H. C. Li et al., Appl. Phys. Lett., 52, 1098 (1988).
J. M. Longo et al., J. Solid State Chem., 6, 526 (1973).
I. M. MacKinnon et al., J. Electrochem. Soc., 122, 806 (1975).
H. Maeda et al., Jpn. J. Appl. Phys., 27, L209 (1988).
P. M. Mankiewich et al., Appl. Phys. Lett., 51, 1753 (1987).
P. M. Mankiewich et al., Mat Res. Soc. Symp. Proc., 99, 119 (1988).
A. F. Marshall et al., Appl. Phys. Lett., 53, 426 (1988).
D. W. Murphy et al., Science, 241, 922 (1988).
Y. Nakayama et al., J. Appl. Phys., 28, L1217 (1989).
B. Oh et al., Appl. Phys. Lett., 51, 852 (1987).
T. Ono et al., Plasma Chemistry and Plasma Processing, 7, 201 (1987).
S. R. Ovshinsky et al., Phys. Rev. Lett., 58, 2579 (1987).
A. J. Panson et al., Appl. Phys. Lett., 53, 1756 (1988).
D. A. Robinson et al., Mat. Res. Soc. Symp. Proc., 99, 587 (1988).
Z. Z. Sheng et al., Nature 332, 55 (1988).
Z. Z. Sheng et al., Phys. Rev. Lett., 60, 937 (1988).
R. M. Silver et al., Appl. Phys. Lett., 52, 2174 (1988).
M. A. Subramanian et al., Science, 239, 1015 (
The present invention was made with the assistance of the National Science Foundation under grants NSF/MSM-8815734 and CDR-8721545. The Government has certain rights in the invention.
Lau Yuk-Chiu
Pfender Emil
King Roy V.
Morgenstern Norman
Regents of the University of Minnesota
LandOfFree
Deposition of superconducting thick films by spray inductively c does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Deposition of superconducting thick films by spray inductively c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Deposition of superconducting thick films by spray inductively c will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-131761