Deposition of solid semiconductor compositions and novel semicon

Details Deposition of solid semiconductor compositions and novel semicon Deposition of solid semiconductor compositions and novel semicon

1978-11-20

1980-07-22

Dean, R.

Specialized metallurgical processes, compositions for use therei

Processes

Free metal or alloy reductant contains magnesium

75134G, 75134R, 75134S, 75134T, 148175, C01C 1500, B44D 102, H01L 736

Patent

active

042137810

ABSTRACT:
Solid layer semiconductor compositions are deposited by the simultaneous sputtering from a sputter target and electrically discharge a reacting gas preferably by application of an RF potential. Preferably, the method is used to make solid solution layers and most desirably solid solution epitaxial layers of at least two semiconductor materials. The method may be used to make novel metastable compositions such as (GaAs).sub.1-x Si.sub.x, (GaAs).sub.1-x, Ge.sub.x, (InSb).sub.1-x Si.sub.x, (InSb).sub.1-x Ge.sub.x, (InAs).sub.1-x Si.sub.x and (InAs).sub.1-x Ge.sub.x (where x is a number greater than about 0.01, and x+(1-x)=1, and Ga.sub.x As.sub.y Si.sub.z, Ga.sub.x As.sub.y Ge.sub.z, In.sub.x Sb.sub.y Si.sub.z, In.sub.x Sb.sub.y Ge.sub.z, In.sub.x As.sub.y Si.sub.z, In.sub.x As.sub.y Ge.sub.z and In.sub.x Sb.sub.y As.sub.z (where x, y and z are numbers greater than about 0.01, and x+y+z=1).

REFERENCES:
patent: 2830239 (1958-04-01), Jenny
patent: 3266952 (1966-08-01), McCaldin
patent: 3560275 (1971-02-01), Kressel et al.
patent: 3716404 (1973-02-01), Hirao et al.
patent: 3979271 (1976-09-01), Noreika et al.
Rado et al., "Si in LPE-grown GA.sub.1-x Al.sub.x As . . . ", J. Appl. Phys., 43, (1972), 4816.
Semiconductors & Semimetals, vol. 4, Ed. Willardson et al., _Acad. Press, N.Y., 1968, pp. 413-424.

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