Deposition of solid semiconductor compositions and novel semicon

Details Deposition of solid semiconductor compositions and novel semicon Deposition of solid semiconductor compositions and novel semicon

1973-07-23

1976-09-07

Vertiz, Oscar R.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

75134G, 75134T, 75134S, 75134H, 75134P, 252 623E, 252 623S, 252 623GA, 252518, C01C 1500

Patent

active

039792714

ABSTRACT:
Solid layer semiconductor compositions are deposited by the simultaneous sputtering from a sputter target and electrically discharge a reacting gas preferably by application of an RF potential. Preferably, the method is used to make solid solution layers and most desirably solid solution epitaxial layers of at least two semiconductor materials. The method may be used to make novel metastable compositions such as (GaAs).sub.1.sub.-x Si.sub.x, (GaAs).sub.1.sub.-x Ge.sub.x, (InSb).sub.1.sub.-x Si.sub.x, (InSb).sub.1.sub.-x Ge.sub.x, (InAs).sub.1.sub.-x Si.sub.x and (InAs).sub.1.sub.-x Ge.sub.x (where x is a number greater than about 0.01, and x + (1-x) = 1, and Ga.sub.x As.sub.y Si.sub.z, Ga.sub.x As.sub.y Ge.sub.z, In.sub.x Sb.sub.y Si.sub.z, In.sub.x Sb.sub.y Ge.sub.z, In.sub.x As.sub.y Si.sub.z, In.sub.x As.sub.y Ge.sub.z and In.sub.x Sb.sub.y As.sub.z (where x, y and z are numbers greater than about 0.01, and x + y + z = 1).

REFERENCES:
patent: 3418229 (1968-12-01), Lakshmanan et al.
patent: 3607697 (1971-09-01), Shirn et al.
patent: 3629088 (1971-12-01), Frank et al.
patent: 3725749 (1973-04-01), Groves et al.
patent: 3767472 (1973-10-01), Chicotka et al.
Tanaka, "Photoconductivity of CdSe Films Prepared by a Vapor Evaporating-Reactive Sputtering Method," Japanese Journal of Applied Physics, vol. 9, No. 9, Sept., 1970, pp. 1070-1077.
Vossen, "RF Sputtered Transparent Conductors, The System In.sub.2 O.sub.3 -SnO.sub.2, RCA Review, vol. 32, No. 2, June, 1971, pp. 289-296.
Finch et al., "Preparation of GaAs.sub.x P.sub.1.sub.-x by Vapor Phase Reaction," Journal of the Electrochemical Society, July, 1964, pp. 814-817.
Blum et al., "Liquid Phase Epitaxy Growth of Ternary III-V Alloys," IBM Technical Disclosure Bulletin, vol. 13, No. 10, Mar., 1971, pp. 2922-2923.
Kay et al., "Controlled Sputtering Process," IBM Technical Disclosure Bulletin, vol. 12, No. 9, Feb., 1970, p. 1358.
Hanak, "Compositional Determination of rf Co-Sputtered Multi-component Systems," J. of Vac. Sci. and Tech., vol. 8, No. 1, Jan.-Feb., 1971, pp. 172-175.
Jacobs et al., "Preparation of High-Resistivity Semiconductors by Sputtering," IBM Technical Disclosure Bulletin, vol. 14, No. 8, Jan., 1972, p. 2464.
Rawlins et al., "Sputtered Zinc Sulphide Films on Silicon," Journal of Materials Science 7, No. 3, (1972), pp. 257-264.

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