Deposition of silicon nitride

Details Deposition of silicon nitride Deposition of silicon nitride

1979-03-26

1981-07-21

Smith, Ronald H.

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

427 51, 427 94, 427294, C23C 1114

Patent

active

042799473

ABSTRACT:
Silicon nitride is pyrolytically deposited by the reaction of a halosilane with ammonia in an evacuated system. The process is particularly useful in providing uniform layers of silicon nitride on silicon wafers to be used in the fabrication of semiconductor devices.

REFERENCES:
patent: 3537891 (1970-11-01), Rairden
patent: 3574014 (1971-04-01), Hugle
patent: 3578495 (1971-05-01), Pammer et al.
patent: 3637423 (1972-01-01), Sestrich
patent: 3652324 (1972-03-01), Chu et al.
patent: 3798061 (1974-03-01), Yamazaki
patent: 3922467 (1975-11-01), Pinchon
Aboaf, J. Electrochem. Soc., v. 116, No. 12, p. 1736 (1969).
Milek, Silicon Nitride for Microelectronic Applications, pp. 5, 7 and 19 (1971).

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