Deposition of silicon dioxide

Details Deposition of silicon dioxide Deposition of silicon dioxide

1983-01-13

1987-08-11

Morgenstern, Norman

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

4272553, 427404, 4274071, 4274192, 4274195, B05D 306

Patent

active

046861122

ABSTRACT:
An improved method of forming layers of silicon dioxide on a substrate whereby high quality films are prepared at ambient temperature. The films are formed by electron beam evaporation in the presence of oxygen containing water vapor.

REFERENCES:
patent: 3306768 (1967-02-01), Peterson
patent: 3522080 (1970-07-01), Dietzel et al.
patent: 3850687 (1974-11-01), Kern
patent: 4196232 (1980-04-01), Schnable
patent: 4216501 (1980-08-01), Bell
patent: 4282270 (1981-08-01), Nozaki et al.
Pliskin et al., Journal of the Electrochemical Society, vol. 112, No. 10, pp. 1013-1019, (1965).

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