Deposition of polysilicon using a remote plasma and in situ gene

Details Deposition of polysilicon using a remote plasma and in situ gene Deposition of polysilicon using a remote plasma and in situ gene

1987-11-05

1989-11-21

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437171, 437949, 437967, 427 38, 427 531, 156345, 156643, H01L 21302, H01L 21306

Patent

active

048822990

ABSTRACT:
A processing apparatus and method for depositing doped or undoped polysilicon on a wafer utilizing a single process chamber to heat the wafer, provide a silicon comtaining gas, and if desired, an appropriate dopant gas to the chamber with the excitation energy being provided by either or both of a remotely generated plasma form and illumination of the wafer with an in situ generated ultraviolet energy.

REFERENCES:
patent: 4138509 (1979-02-01), Ingle et al.
patent: 4492716 (1985-01-01), Yamazaki
patent: 4579609 (1986-04-01), Reif et al.
patent: 4685999 (1987-08-01), Davis et al
Ghandhi, Sorab K., VLSI Fabrication Principles, John Wiley & Sons, New York, 1986, pp. 233-234.

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