Deposition of polycrystalline diamond film on zinc sulfide subst

Coating processes – Coating by vapor – gas – or smoke – Carbon or carbide coating

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4272557, 427299, 359359, C23C 1626, C23C 1634

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058373225

ABSTRACT:
An adhering, continuous, polycrystalline diamond film is deposited on a z sulfide substrate by forming a refractory nitride interlayer directly on the substrate and then depositing diamond on the interlayer in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon. The diamond film may be of optical quality and may be deposited without mechanical treatment or seeding of the zinc sulfide substrate or the nitride interlayer. However, diamond deposition may be facilitated by abrasion of the interlayer before diamond deposition.

REFERENCES:
patent: 4734339 (1988-03-01), Schachner et al.
patent: 5183602 (1993-02-01), Raj et al.
patent: 5254237 (1993-10-01), Snaper et al.
patent: 5365345 (1994-11-01), Propst et al.
patent: 5387310 (1995-02-01), Shiomi et al.
patent: 5496596 (1996-03-01), Herb et al.
Mirtich et al, J. Vac. Sci. Technol. A4(6), Nov./Dec. 1986 pp. 2680-2681.

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