Coating processes – Electrical product produced – Welding electrode
Patent
1985-09-16
1987-02-24
Smith, John D.
Coating processes
Electrical product produced
Welding electrode
156613, 427 87, H01L 21205
Patent
active
046456872
ABSTRACT:
A low temperature procedure for depositing III-V semiconductor materials that offers the possibility of higher deposition rates together with abrupt junction formation has been found. This process involves the irradiation at a deposition substrate with a high power density radiation source of deposition gases such as organometallic materials, e.g., trimethyl gallium and trimethyl indium. By utilizing a sufficiently high power density, multiphoton processes are induced in the deposition gas that, in turn, lead to advantageous deposited materials.
REFERENCES:
patent: 4260649 (1981-04-01), Denison
patent: 4340617 (1982-07-01), Deutsch
patent: 4359485 (1982-11-01), Donnelly
patent: 4447469 (1984-05-01), Peters
Moison et al, "Laser-Induced Surface Defects", Mat. Res. Soc. Symp. Proc., vol. 13, (1983), pp. 329-334.
Antypas, "Prevention of InP Surface Decomposition . . . ", Applied Physics Letters, vol. 37, No. 1, Jul. 1980, pp. 64, 65.
Ehrlich et al, "Photodeposition of Metal Films with Ultraviolet Laser Light", Journal of Vacuum Sciences and Technology, vol. 21, No. 1, (1982), pp. 23-32.
Andreatta et al, "Low-Temperature . . . by Ultraviolet Laser Photodissociation of Silane . . . ", Applied Physics Letters, 40, (2), Jan. 15, 1982, pp. 183-185.
Boyer et al, "Laser-Induced . . . ", Applied Physics Letters, 40, (8), Apr. 15, 1982, pp. 716-719.
Silversmith et al, "Laser-Photochemical . . . ", Conferences: 1981 Symposium on VLSI Technology, Digest of Technical Papers, Maui, HI, 9-11 Sep. 1981, pp. 70, 71.
Donnelly Vincent M.
Karlicek, Jr. Robert F.
AT&T Laboratories
Schneider Bruce S.
Smith John D.
LandOfFree
Deposition of III-V semiconductor materials does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Deposition of III-V semiconductor materials, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Deposition of III-V semiconductor materials will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-108664