Deposition of fluorosilsesquioxane films

Details Deposition of fluorosilsesquioxane films Deposition of fluorosilsesquioxane films

2005-01-04

2005-01-04

Meeks, Timothy (Department: 1762)

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

C427S255290, C427S579000, C427S558000, C427S248100, C438S787000

Reexamination Certificate

active

06838124

ABSTRACT:
There is provided an array of fluoro-substituted silsesquioxane thin film precursors having a structure wherein fluoro groups are bonded to the silicon atoms of a silsesquioxane cage. In a first aspect, the present invention provides a composition comprising a vaporized material having the formula [F—SiO1.5]x[H—SiO1.5]y, wherein x+y=n, n is an integer between 2 and 30, x is an integer between 1 and n and y is a whole number between 0 and n. Also provided are films made from these precursors and objects comprising these films.

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