Deposition of films of cubic boron nitride and nitrides of other

Details Deposition of films of cubic boron nitride and nitrides of other Deposition of films of cubic boron nitride and nitrides of other

1985-08-12

1987-12-22

Pianalto, Bernard D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 38, 427 42, 427 47, 427255, 4272552, 4272553, 427314, B05D 306

Patent

active

047146257

ABSTRACT:
Process for producing cubic boron nitride films on a substrate by activated dissociation reduction-reaction. Boric acid in the condensed state is evaporated in a vacuum chamber from a resistance-heated evaporation source and ammonia gas is introduced into the chamber. The vapor of the boric acid and the molecules of the ammonia gas are ionized by a beam of low-energy electrons in the reaction zone between the resistance-heated evaporation source and the substrate. The ammonia gas reacts with the boric acid in a two-step process in which (1) the boric acid is reduced by the atomic hydrogen formed by the dissociation of ammonia, and (2) the resulting boron atoms react with the nitrogen atoms released by the dissociation of ammonia to form boron nitride which deposits as a film onthe substrate. This film has the cubic boron nitride structure and is ready for use without requiring post-deposition heat treatment.

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