Deposition of doped silicon oxide films

Details Deposition of doped silicon oxide films Deposition of doped silicon oxide films

1977-08-30

1980-08-12

Kendall, Ralph S.

Coating processes

Electrical product produced

Condenser or capacitor

427 95, 148174, H01L 2118

Patent

active

042173752

ABSTRACT:
A method of depositing doped silicon dioxide layers in the fabrication of semiconductor devices has been found. This method entails the reaction of a mixture of silane, nitrous oxide and a source of a dopant, e.g., phosphine or diborane. The reaction is performed at relatively high temperature, typically between 800 and 900 degrees C., and excellent step coverage is obtained. Further, the pinhole problems previously associated with high temperature techniques are avoided. Lower dopant concentrations, e.g., below 6%, are also practical.

REFERENCES:
patent: 3117838 (1964-01-01), Sterling et al.
patent: 3200019 (1965-08-01), Scott, Jr. et al.
patent: 3476619 (1969-11-01), Tolliver
patent: 3481781 (1969-12-01), Kern
patent: 3485666 (1969-12-01), Sterling et al.
patent: 3681155 (1972-08-01), Elgan et al.
patent: 3690969 (1972-09-01), Hays et al.
patent: 3698071 (1972-10-01), Hall
patent: 3808060 (1974-04-01), Hays et al.
patent: 3892606 (1975-07-01), Chappelow
patent: 4002512 (1977-01-01), Lim
patent: 4034130 (1977-07-01), Briska et al.
Sterling et al., Solid-State Electronics, Pergamon Press, 1965, pp. 653-654.
Alexander et al., Thin Film Dielectrics, Electrochem. Soc. Conference (1970), pp. 186-208.

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