Deposition of device quality low H content, amorphous silicon fi

Details Deposition of device quality low H content, amorphous silicon fi Deposition of device quality low H content, amorphous silicon fi

1994-06-03

1995-03-14

Fourson, George

Fishing, trapping, and vermin destroying

427 99, H01L 21203

Patent

active

053977378

ABSTRACT:
A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH.sub.4) over a high temperature, 2000.degree. C., tungsten (W) filament in the proximity of a high temperature, 400.degree. C., substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20-30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content.

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