Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2007-08-28
2007-08-28
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S090000, C117S091000, C505S929000
Reexamination Certificate
active
10812676
ABSTRACT:
A method of making a multilayer article includes depositing a first material on the surface of a metal substrate to form a seed layer of the first material, the first material being deposited under reducing conditions relative to the metal substrate, and then epitaxially depositing a second material on a surface of the seed layer, wherein the second material is deposited from a solution-based precursor under second conditions that are more oxidizing than the reducing conditions used in the deposition of the first material.
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Kodenkandath Thomas
Li Xiaoping
Rupich Martin W.
Schoop Urs-Detlev
Verebelyi Darren
American Superconductor Corporation
Kunemund Robert
Wilmer Cutler Pickering Hale and Dorr LLP
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