Deposition of buffer layers on textured metal surfaces

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

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C117S090000, C117S091000, C505S929000

Reexamination Certificate

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10812676

ABSTRACT:
A method of making a multilayer article includes depositing a first material on the surface of a metal substrate to form a seed layer of the first material, the first material being deposited under reducing conditions relative to the metal substrate, and then epitaxially depositing a second material on a surface of the seed layer, wherein the second material is deposited from a solution-based precursor under second conditions that are more oxidizing than the reducing conditions used in the deposition of the first material.

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