Deposition of a conductive layer for contacts

Details Deposition of a conductive layer for contacts Deposition of a conductive layer for contacts

1990-01-29

1991-06-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437191, 437926, 437109, 148DIG25, 148DIG124, 148DIG122, H01L 21469

Patent

active

050249720

ABSTRACT:
A polysilicon layer may need to have electrical characteristics which are relatively uniform from wafer to wafer. The use of polysilicon as a resistor is one such example. In order to obtain the requisite uniformity, the temperature of the wafers which are receiving the polysilicon must all be the same within a tight tolerance. The reaction takes place in a furnace which takes a long time to reach the requisite temperature tolerance. While the furnace is stabilizing the temperature, oxide, which is an insulator, is growing on the contact locations of the various substrates. To minimize the deleterious oxide formation, a thin layer of polysilicon is deposited at a time significantly prior to the time that the furnace stabilizes which ensures a good, low-resistance contact. The remainder of the polysilicon is then deposited on the thin layer of polysilicon after the temperature has stabilized to obtain the requisite wafer-to-wafer resistance uniformity. The result is consistently low-resistance contacts and wafer-to-wafer uniformity for the resistance of the resistors.

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