Deposition method for producing silicon carbide high-temperature

Details Deposition method for producing silicon carbide high-temperature Deposition method for producing silicon carbide high-temperature

1986-01-31

1987-05-12

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

427 95, 427213, 156613, 156DIG64, 148DIG148, B05D 700, H01L 21205

Patent

active

046649441

ABSTRACT:
An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

REFERENCES:
patent: 3340110 (1967-09-01), Grabmaier
patent: 3520740 (1970-07-01), Addamiano
patent: 4424199 (1984-01-01), Iya
patent: 4444811 (1984-04-01), Hsu

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