Deposition method for heteroepitaxial diamond

Details Deposition method for heteroepitaxial diamond Deposition method for heteroepitaxial diamond

1997-08-13

2000-05-16

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117104, 117929, 423446, 204173, 427450, 427577, C30B 2904

Patent

active

060631872

ABSTRACT:
A method for the growth of diamond on a substrate combines an ECR (Electron cyclotron resonance) MPCVD (Microwave plasma chemical vapor deposition) method with a MPCVD method in one system. A two-step diamond growing method comprises firstly etching and nucleation performed by the ECR method and then diamond grown by the microwave plasma CVD method. Not only are high quality continuous polycrystalline diamond films on silicon wafer obtained but also heteroepitaxial growth has been achieved in the present invention. Auger electron spectroscopy (AES), scanning electron microscopy (SEM) and Raman spectroscopy have been used to characterize the structure and morphology of the synthesized diamond films.

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