Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1995-03-14
1996-04-02
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 92, 117105, C30B 2514
Patent
active
055031056
ABSTRACT:
A deposition method of a compound semiconductor forming a semiconductor device comprises the steps of; covering the surface of a compound semiconductor containing a V group element with a III group element with a thickness of one or more monolayers; and forming a second compound semiconductor containing a V group element different from said V group element on said III group element while utilizing said III group element as a protective film for preventing the desorption of said V group element.
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"OMVPE Growth of GaInAs/InP and GaInAs/GaIn AsP quantum well"; Kamei, et al; J. Cryst. Growth 107 (1991), pp. 567-572.
"Effect of growth parameters on the interfacial structure of GaInAs/InP quantum wells"; Hergeth, et al; J. Cryst. Growth 107 (1991) pp. 537-542.
"Strained InAs single quantum wells embedded in Ga0.47In0.53As matrix"; Tournie, et al; Appl. Phys. Lett. 61(7), 17 Aug. 1992, pp. 846-848.
Breneman R. Bruce
Fujitsu Ltd.
Garrett Felisa
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