Deposition mask and method of preparing the same

Details Deposition mask and method of preparing the same Deposition mask and method of preparing the same

2005-03-01

2005-03-01

Hiteshew, Felisa (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

C438S706000, C117S090000

Reexamination Certificate

active

06861358

ABSTRACT:
A deposition mask capable of relaxing nonuniformity of the thickness of a deposit formed on a substrate and reducing the width of a non-opening part of a mask layer by reducing the thickness of the mask layer is obtained. This deposition mask comprises a mask layer formed by a single silicon thin film and a mask pattern, formed on the mask layer, including a mask opening having an opening width increased toward a deposition source. The mask layer formed by a silicon thin film can be reduced in thickness due to small deflection caused by its own weight. Thus, the width of the non-opening part of the mask layer can be reduced, whereby the width of a part formed with no deposit can be reduced. The mask opening having the opening width increased toward the deposition source reduces the probability of deposit particles, obliquely scattered from the deposition source, hitting an end of the mask opening, whereby the deposit is prevented from being reduced in thickness on an end corresponding to the end of the mask opening as well as from nonuniformity of the thickness.

REFERENCES:
patent: 5814924 (1998-09-01), Komatsu
patent: 6566265 (2003-05-01), Esashi et al.
patent: 10-298738 (1998-11-01), None
patent: 10-319870 (1998-12-01), None

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