Deposition apparatus for growing a material with reduced hazard

Details Deposition apparatus for growing a material with reduced hazard Deposition apparatus for growing a material with reduced hazard

1991-11-08

1998-11-10

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118715, 118724, 118719, C23C 1600

Patent

active

058337547

ABSTRACT:
An apparatus for growing a material at high temperature and employing a reaction gas. A reaction vessel is formed of a metal sidewall having outer and inner surfaces, the inner surface surrounding and defining a reaction chamber within the reaction vessel and which is generally vertically oriented. A cooling system maintains the metal sidewall of the reaction vessel at a temperature at which the metal does not produce contamination within the reaction chamber as a result of the high temperature operation, the reactant gases introduced into the reaction chamber or the product gases resultant from the reaction. A support mechanism includes a generally vertically oriented rod member which supports a susceptor, adapted to hold a wafer on which the material is to be grown, within the bottom part of the reaction chamber and, further, seals the reaction chamber. A sleeve is disposed closely adjacent to but spaced from the inner surface of the generally cylindrical metal sidewall portion and is of a material which remains stable at the high temperature of the reaction required for growing the material.

REFERENCES:
patent: 4556584 (1985-12-01), Sarkozy
Fowler IBM Tech. Dis. Bul. vol. 22, No. 11, Apr. 1980.
Patent Abstracts of Japan, vol. 6, No. 226 (E-141)(1104) 11 Nov. 1982 & JP-A-57-128021 (Toshiba Kikai KK) 9 Aug. 1982.
M. Ikeda et al., "Uniform Growth of GaAs by MOCVD on Multi-Wafers," Journal of Crystal Growth, vol. 77, No. 1-3, 1 Sep. 1986, Amsterdam, NL, pp. 157-162.

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