Deposition and sputter etch approach to extend the gap fill...

Details Deposition and sputter etch approach to extend the gap fill... Deposition and sputter etch approach to extend the gap fill...

2005-03-29

2005-03-29

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S702000, C438S703000, C438S763000, C438S778000

Reexamination Certificate

active

06872633

ABSTRACT:
A method of filling an STI feature with a dielectric material using a HDP CVD technique is described. By omitting an inert carrier gas like argon in the first CVD step, a small keyhole in a SiO2layer is formed near the top of the trench. A sputter etch step in the same CVD chamber then removes dielectric material above the keyhole. A second CVD step completely fills the STI trench which is free of voids and forms a layer above the adjacent nitride layer. The nitride layer serves as an etch stop during a CMP step to lower the level of dielectric material until it is coplanar with the nitride layer. The method is low cost since all deposition and sputter etch steps are performed in an existing CVD tool and the same tool is useful in forming trenches of various sizes ranging from below 0.13 micron to above 0.25 micron.

REFERENCES:
patent: 5182221 (1993-01-01), Sato
patent: 6030881 (2000-02-01), Papasouliotis et al.
patent: 6080639 (2000-06-01), Huang et al.
patent: 6261957 (2001-07-01), Jang et al.
patent: 6297128 (2001-10-01), Kim et al.
patent: 6306722 (2001-10-01), Yang et al.
patent: 6319796 (2001-11-01), Laparra et al.
patent: 6323102 (2001-11-01), Horita et al.
patent: 6329261 (2001-12-01), Kishimoto
patent: 6376391 (2002-04-01), Olson et al.
patent: 6410446 (2002-06-01), Tsai et al.
patent: 6432797 (2002-08-01), Cha et al.
patent: 6531377 (2003-03-01), Knorr et al.

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