Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1985-08-02
1987-03-03
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Assembling or joining
29591, 148DIG131, 357 237, 156643, H01L 2978
Patent
active
046464247
ABSTRACT:
The gate electrode in an inverted field effect transistor (FET) is fabricated with titanium to provide an FET which is particularly suitable for use as the switching element in a matrix addressed liquid crystal display. More particularly, the resist employed in gate electrode patterning is plasma ashed in an oxygen atmosphere to toughen the titanium gate material and render it more amenable to subsequent processing steps.
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Parks Harold G.
Possin George E.
Callahan John T.
Cutter Lawrence D.
Davis Jr. James C.
General Electric Company
Hearn Brian E.
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