Deposition and diffusion source control means and method

Details Deposition and diffusion source control means and method Deposition and diffusion source control means and method

1983-08-15

1985-05-14

Lusignan, Michael R.

Coating processes

Measuring, testing, or indicating

7386102, 118712, 118715, 156614, 156627, 427 86, 427 93, 4272481, B05D 512, C23C 1100, C23C 1300, H01L 21306

Patent

active

045172200

ABSTRACT:
The uniformity and reproducibility of doped, deposited, or etched layers formed in a reaction chamber by a reactant derived in part from a solid or liquid reactant source, through which a carrier gas flows, is improved by dynamically adjusting the carrier gas flow so that the ratio of the partial pressure of the reactant and the partial pressure of the carrier gas in the source chamber remains substantially constant. This is conveniently accomplished by measuring the instantaneous source temperature therefrom, and then dynamically adjusting the carrier gas flow into the system to keep the total pressure of the reactant vapor plus carrier gas mixture in the source chamber at a predetermined value.

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