Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1978-03-30
1979-07-10
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148172, 118415, 427 86, H01L 21208
Patent
active
041606825
ABSTRACT:
In certain manufacturing operations materials are deposited onto semiconductor wafers. For example, in liquid-phase epitaxial melt deposition, wafers are exposed to a melt having constituents identical to the wafer material. In the past this has been accomplished by individually sliding the wafers into the melt and/or sliding portions of melt onto the wafers. This sliding creates a high amount of friction which in turns generates particles which can contaminate the melt. Also, this friction limits the number of wafers that can be simultaneously processed by sliding techniques. To avoid this a movable melt reservoir 62 is located above stacked stationary wafers 44. Prior to deposition, the melt 68 in the reservoir is separated from the wafers 44 by offsetting an aperture 64 in the bottom of the reservoir 62 from a passageway 58 leading to the wafers 44. The reservoir 62 is then moved to align the aperture 64 either partially or completely with the passageway 58 to give a controlled flow of the melt 68 to the wafers 44. Since the reservoir 62 only moves a short distance, the friction and particles are minimal. Also, by providing slots 74 in the top 57 of the wafer pocket 42, a gas-phase doping can be combined with the liquid deposition.
REFERENCES:
patent: 3809010 (1974-05-01), Springthorpe
patent: 3853643 (1974-12-01), Verleur
patent: 3854447 (1974-12-01), Kobayasi
patent: 3880680 (1975-04-01), Weyrich
patent: 3896765 (1975-07-01), Ariga
patent: 3933123 (1976-01-01), Andre
Japanese J. Appl. Phys., vol. 15, No. 5 (1976), pp. 887-888.
Japanese J. Appl. Phys., vol. 15, No. 7, Jul. 1976, pp. 1219-1227.
Ozaki G.
Western Electric Co. Inc.
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