Depositing doped material on a substrate

Details Depositing doped material on a substrate Depositing doped material on a substrate

1975-01-06

1976-09-07

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148174, 148189, 148 15, H01L 736

Patent

active

039792358

ABSTRACT:
A method of providing doped material on a substrate by chemical vapour deposition using a reactive gas.
Variations in the doping level are obtained by displacing the doping source along a flow of non-reactive gas having a constant supply in order to vary the amounts of dopant converted to the vapour phase due to retrodiffusion of reactive vapours towards the doping source.
Application to semiconductor devices in particular of the III-V type, especially for high-frequency devices.

REFERENCES:
patent: 3065062 (1962-11-01), Enk et al.
patent: 3421952 (1969-01-01), Conrad et al.
patent: 3492175 (1970-01-01), Conrad et al.
patent: 3701682 (1972-10-01), Gartman et al.
patent: 3764414 (1973-10-01), Blum et al.
Effer, J. of Electrochemical Soc., vol. 112, No. 10, Oct. 1965, pp. 1020-1024.
Tietjen et al., RCA Review, Dec. 1970, pp. 635-646.

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