Deposited layer type thermometric resistance structure

Details Deposited layer type thermometric resistance structure Deposited layer type thermometric resistance structure

1975-10-22

1977-06-07

Albritton, C. L.

Electrical resistors

With base extending along resistance element

Resistance element and/or terminals printed or marked on base

338308, 338309, 338314, 427124, 427125, H01C 1012

Patent

active

040286576

ABSTRACT:
On an aluminum oxide or high-alumina ceramic substrate an intermediate layer of a rare earth, titanium or iron oxide or a mixture of such oxides is provided for matching the thermal expansion coefficient of the substrate to that of a platinum layer between 0.1 and 10 .mu. m thick applied in a resistor pattern configuration on the surface of the intermediate layer. The intermediate layer, unlike a glass embedding layer, allows heat treatment of the platinum layer by heating the entire structure makes it possible to avoid the embedding to heal local defects, without impairing the integrity of the structure (which occur when glass melt) and without co-crystallizing with aluminum oxide. The platinum layer thickness is consistent with stability of the specific resistance and the temperature coefficient of resistance.

REFERENCES:
patent: 2802925 (1957-08-01), VonSeelen et al.
patent: 3845443 (1974-10-01), Fisher

Affiliated with

Also associated with

Rating

Deposited layer type thermometric resistance structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Deposited layer type thermometric resistance structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Deposited layer type thermometric resistance structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1240668